Gallium Arsenide and Gallium Nitride Devices

Header Image Bottom Left Bottom Right

Gallium Arsenide and Gallium Nitride Devices

 

GaN HEMT's
for space, base station and industrial applications

  • high efficiency
  • wide bandgap, high breakdown voltage
  • discrete and internally matched metal flange packages

Datasheets and Product Information

 

Low Noise HEMT's
for DBS and automotive radar

  • high gain and lowest noise figure
  • plastic and ceramic package versions

 

High Power GaAs FET's
for space, radio link, base station, radar and industrial applications

  • available as plastic/ceramic SMD and in high reliability metal flange packages
  • internally matched FET's for best efficiency and easy use

 

GaAs HBT MMIC's
for cellular Power Amplifier (PA) and WiMAX CPE

  • leading efficiency InGaP HBT modules
  • high integration for advanced communication systems

Datasheets and Product Information

 
Quick Search

For more information, select your "Country" and your "Product of interest"

Your Country

Product of Interest