Power Mosfet Modules

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Power Mosfet Modules

The Mitsubishi Electric Power MOSFET modules are based on the advanced 0.35µm trench gate MOSFET chip technology in order to achieve low VDS(on) and low VSD. The operation without snubber circuit is possible. The avalanche capability is guaranteed at turn-off and recovery.

Ratings of 100A(rms) to 300A(rms) in 75V, 100V and 150V are available in a 6 in 1 compact package.

 

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